| PART |
Description |
Maker |
| RM200DG-130S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM1200HE-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM1200DG-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM1200DB-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FM400TU-2A09 |
MOSFET MODULE HIGH POWER SWITCHING USE INSULATED PACKAGE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
| UFL200FA60P |
Insulated Ultrafast Rectifier Module
|
Vishay Siliconix
|
| UFB60FA40P10 |
Insulated Ultrafast Rectifier Module, 60 A
|
Vishay Siliconix
|
| UFB130FA20 |
Insulated Ultrafast Rectifier Module, 130 A
|
Vishay Siliconix
|
| UFB200FA60P |
Insulated Ultrafast Rectifier Module, 200 A
|
Vishay Siliconix
|
| UFB200FA40P UFB200FA40 |
Insulated Ultrafast Rectifier Module, 230 A
|
Vishay Siliconix
|
| UFB120FA20P |
Insulated Ultrafast Rectifier Module, 120 A
|
Vishay Siliconix
|
